Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate

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dc.creatorPingenot, Joseph
dc.creatorPryor, Craig E.
dc.creatorFlatté, Michael E.
dc.date2008-03-05
dc.date.accessioned2026-07-07T09:53:38Z
dc.date.available2026-07-07T09:53:38Z
dc.descriptionWe calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show this should permit full Bloch-sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0803.0708
dc.identifierhttp://arxiv.org/abs/0803.0708
dc.identifierAppl. Phys. Lett. 92, 222502 (2008)
dc.identifierdoi:10.1063/1.2937305
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/166024
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleMethod for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
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