Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition

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dc.creatorZeng, Li
dc.creatorHelgren, E.
dc.creatorIslam, R.
dc.creatorWilkens, B. J.
dc.creatorCulbertson, R. J.
dc.creatorSmith, David J.
dc.creatorHellman, F.
dc.date2007-06-19
dc.date.accessioned2026-07-07T08:11:08Z
dc.date.available2026-07-07T08:11:08Z
dc.descriptionThe magnetic and electrical transport properties of Mn-doped amorphous silicon (\textit{a-}Mn$_{x}$Si$_{1-x}$) thin films have been measured. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of $x$ (0.005-0.175) and the saturation moment is small. While all Mn atoms contribute to the electrical transport, only a small fraction (interstitial Mn$^{2+}$ states with $J$=$S$=5/2) contribute to the magnetization. The majority of the Mn atoms do not possess any magnetic moment, contrary to what is predicted by the Ludwig-Woodbury model for Mn in crystalline silicon. Unlike \textit{a-}Gd$_{x}$Si$_{1-x}$ films which have an enormous \textit{negative} magnetoresistance, \textit{a-}Mn$_{x}$Si$_{1-x}$ films have only a small \textit{positive} magnetoresistance, which can be understood by this quenching of the Mn moment.
dc.description8 figures
dc.identifierhttps://arxiv.org/abs/0706.2847
dc.identifierhttp://arxiv.org/abs/0706.2847
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/132026
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleQuenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition
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