Critical Behaviour near the Mott Transition in a Two-Band Hubbard Model
| dc.creator | Ohashi, Yasuo | |
| dc.creator | Ōno, Yoshiaki | |
| dc.date | 2001-09-25 | |
| dc.date.accessioned | 2026-07-07T02:42:49Z | |
| dc.date.available | 2026-07-07T02:42:49Z | |
| dc.description | The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping is calculated analytically as a function of the on-site Coulomb interaction $U$, and the charge-transfer energy $Δ$ between the $d$- and $p$-orbitals, transfer integrals $t_{pd}$, $t_{pp}$, $t_{dd}$ between $p$-$d$, $p$-$p$ and $d$-$d$ sites respectively. The critical behaviour of the quasiparticle weight is also obtained analytically. | |
| dc.description | 3 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0109446 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0109446 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/18293 | |
| dc.subject | Strongly Correlated Electrons | |
| dc.title | Critical Behaviour near the Mott Transition in a Two-Band Hubbard Model | |
| dc.type | text |