Percolative Effects on Noise in Pentacene Transistors

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dc.creatorConrad, B. R.
dc.creatorCullen, W. G.
dc.creatorYan, W.
dc.creatorWilliams, E. D.
dc.date2007-10-14
dc.date2008-09-26
dc.date.accessioned2026-07-07T10:05:07Z
dc.date.available2026-07-07T10:05:07Z
dc.descriptionThe 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.
dc.description13 pages, 4 figures, Published
dc.identifierhttps://arxiv.org/abs/0710.2700
dc.identifierhttp://arxiv.org/abs/0710.2700
dc.identifierAppl. Phys. Lett. 91, 242110 (2007)
dc.identifierdoi:10.1063/1.2823577
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/169915
dc.subjectMaterials Science
dc.subjectDisordered Systems and Neural Networks
dc.titlePercolative Effects on Noise in Pentacene Transistors
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