Photoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization

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dc.creatorKobayashi, M.
dc.creatorOoki, Y.
dc.creatorTakizawa, M.
dc.creatorSong, G. S.
dc.creatorFujimori, A.
dc.creatorTakeda, Y.
dc.creatorTerai, K.
dc.creatorOkane, T.
dc.creatorFujimori, S. -I.
dc.creatorSaitoh, Y.
dc.creatorYamagami, H.
dc.creatorSeki, M.
dc.creatorKawai, T.
dc.creatorTabata, H.
dc.date2007-11-15
dc.date.accessioned2026-07-07T09:33:21Z
dc.date.available2026-07-07T09:33:21Z
dc.descriptionBy means of photoemission and x-ray absorption spectroscopy, we have studied the electronic structure of (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films, which exhibits a cluster glass behavior with a spin-freezing temperature $T_f$ of $\sim 230$ K and photo-induced magnetization (PIM) below $T_f$. The Ni and Zn ions were found to be in the divalent states. Most of the Fe and Ti ions in the thin films were trivalent (Fe$^{3+}$) and tetravalent (Ti$^{4+}$), respectively. While Ti doping did not affect the valence states of the Ni and Zn ions, a small amount of Fe$^{2+}$ ions increased with Ti concentration, consistent with the proposed charge-transfer mechanism of PIM.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0711.2377
dc.identifierhttp://arxiv.org/abs/0711.2377
dc.identifierAppl. Phys. Lett. 92, 082502 (2008)
dc.identifierdoi:10.1063/1.2885080
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/159105
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titlePhotoemission and x-ray absorption studies of valence states in (Ni,Zn,Fe,Ti)$_{3}$O$_{4}$ thin films exhibiting photo-induced magnetization
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