Doping of Mn$_2$VAl and Mn$_2$VSi Heusler alloys as a route to half-metallic antiferromagnetism

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dc.creatorGalanakis, I.
dc.creatorOzdogan, K.
dc.creatorSasioglu, E.
dc.creatorAktas, B.
dc.date2007-01-25
dc.date.accessioned2026-07-07T08:26:45Z
dc.date.available2026-07-07T08:26:45Z
dc.descriptionHalf-metallic antiferromagnets are the ideal materials for spintronic applications since their zero magnetization leads to lower stray fields and thus tiny energy losses. Starting from the Mn$_2$VAl and Mn$_2$VSi alloys we substitute Co or Fe for Mn and we show by means of first-principle electronic structure calculations that the resulting compounds are ferrimagnets. When the total number of valence electrons reaches the magic number of 24 the Fe-doped compounds are semi-metals and thus non-magnetic while the Co-doped ones show the desirable half-metallic antiferromagnetic character. The compounds are very likely to be synthesized experimentally since the parent compounds, Mn$_2$VAl and Co$_2$VAl, have been already grown in the Heusler $L2_1$ lattice structure.
dc.identifierhttps://arxiv.org/abs/cond-mat/0701611
dc.identifierhttp://arxiv.org/abs/cond-mat/0701611
dc.identifierPhysical Review B 75, 092407 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137048
dc.subjectMaterials Science
dc.titleDoping of Mn$_2$VAl and Mn$_2$VSi Heusler alloys as a route to half-metallic antiferromagnetism
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