Diffusion of a polaron in dangling bond wires on Si(001)

dc.creatorTodorovic, M.
dc.creatorFisher, A. J.
dc.creatorBowler, D. R.
dc.date2002-10-30
dc.date2002-11-04
dc.date.accessioned2026-07-07T02:47:59Z
dc.date.available2026-07-07T02:47:59Z
dc.descriptionInjecting charge into dangling bond wires on Si(001) has been shown to induce polarons, which are weakly coupled to the underlying bulk phonons. We present elevated temperature tight binding molecular dynamics simulations designed to obtain a diffusion barrier for the diffusive motion of these polarons. The results indicate that diffusion of the polarons would be observable at room temperature, and that the polarons remain localised even at high temperatures.
dc.description8 pages, 4 figures, accepted as a letter in J.Phys.:Condens. Matter
dc.identifierhttps://arxiv.org/abs/cond-mat/0210671
dc.identifierhttp://arxiv.org/abs/cond-mat/0210671
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20221
dc.subjectMaterials Science
dc.titleDiffusion of a polaron in dangling bond wires on Si(001)
dc.typetext

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