Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

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dc.creatorUmezawa, Hitoshi
dc.creatorTakenouchi, Tomohiro
dc.creatorTakano, Yoshihiko
dc.creatorKobayashi, Kensaku
dc.creatorNagao, Masanori
dc.creatorSakaguchi, Isao
dc.creatorTachiki, Minoru
dc.creatorHatano, Takeshi
dc.creatorZhong, Guofang
dc.creatorTachiki, Masashi
dc.creatorKawarada, Hiroshi
dc.date2005-03-12
dc.date.accessioned2026-07-07T03:04:08Z
dc.date.available2026-07-07T03:04:08Z
dc.descriptionThe superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of 8.4E21 cm-3 (4.7 atomic percent). Tc values of (111) diamond films are more than twice as high as those of (100) films at the equivalent boron concentration. The Tc of boron-doped (111) diamond increases as the boron content increases up to the maximum incorporated concentration and is agrees with the value estimated using McMillan's equation. The advantageous Tc for (111) diamond films is due to the higher carrier concentration which exceeds its boron concentration.
dc.description22 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0503303
dc.identifierhttp://arxiv.org/abs/cond-mat/0503303
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26020
dc.subjectSuperconductivity
dc.titleAdvantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films
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