Simulation of highly idealized, atomic scale MQCA logic circuits

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dc.creatorNikonov, Dmitri E.
dc.creatorBourianoff, George I.
dc.creatorGargini, Paolo A.
dc.date2007-11-14
dc.date.accessioned2026-07-07T08:42:57Z
dc.date.available2026-07-07T08:42:57Z
dc.descriptionSpintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-dependent solution of the density-matrix equation with relaxation. The devices are shown to satisfy requirements for logic. Switching speed and dissipated energy are calculated and compared with electronic transistors. The simulations show that for the highly idealized case assumed here, it is possible to trade off size for speed and achieve lower power operation than ultimately scaled CMOS devices.
dc.description34 pages, 12 figures
dc.identifierhttps://arxiv.org/abs/0711.2246
dc.identifierhttp://arxiv.org/abs/0711.2246
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142149
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleSimulation of highly idealized, atomic scale MQCA logic circuits
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