Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

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dc.creatorFilippi, M.
dc.creatorKundys, B.
dc.creatorRanjith, R.
dc.creatorKundu, A. K.
dc.creatorPrellier, W.
dc.date2008-04-28
dc.date.accessioned2026-07-07T09:41:48Z
dc.date.available2026-07-07T09:41:48Z
dc.descriptionImpedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.
dc.description13 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0804.4387
dc.identifierhttp://arxiv.org/abs/0804.4387
dc.identifierAppl. Phys. Lett. 92, 212905 (2008)
dc.identifierdoi:10.1063/1.2929745
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161956
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleInterfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6
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