Robustness of the optical-conductivity sum rule in Bilayer Graphene

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dc.creatorBenfatto, L.
dc.creatorSharapov, S. G.
dc.creatorCarbotte, J. P.
dc.date2007-12-12
dc.date2008-04-08
dc.date.accessioned2026-07-07T09:30:38Z
dc.date.available2026-07-07T09:30:38Z
dc.descriptionWe calculate the optical sum associated with the in-plane conductivity of a graphene bilayer. A bilayer asymmetry gap generated in a field-effect device can split apart valence and conduction bands, which otherwise would meet at two K points in the Brillouin zone. In this way one can go from a compensated semimetal to a semiconductor with a tunable gap. However, the sum rule turns out to be 'protected' against the opening of this semiconducting gap, in contrast to the large variations observed in other systems where the gap is induced by strong correlation effects.
dc.description6 pages, 3 figures. Final version
dc.identifierhttps://arxiv.org/abs/0712.1885
dc.identifierhttp://arxiv.org/abs/0712.1885
dc.identifierPhys. Rev. B 77, 125422 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.125422
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158181
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleRobustness of the optical-conductivity sum rule in Bilayer Graphene
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