Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise

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dc.creatorBuehler, T. M.
dc.creatorReilly, D. J.
dc.creatorStarrett, R. P.
dc.creatorGreentree, Andrew D.
dc.creatorHamilton, A. R.
dc.creatorDzurak, A. S.
dc.creatorClark, R. G.
dc.date2003-04-16
dc.date2004-09-22
dc.date.accessioned2026-07-07T02:50:49Z
dc.date.available2026-07-07T02:50:49Z
dc.descriptionThe radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and telegraph charge noise. For a typical spectrum of 1/f noise we find that high fidelity, single-shot measurements are possible for signals q > 0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time-scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid state quantum computer.
dc.descriptionUpdated and revised version (content including Figs updated). Comments very welcome: tilo@jupiter.phys.unsw.edu.au,djr@jupiter.phys.unsw.edu.au
dc.identifierhttps://arxiv.org/abs/cond-mat/0304384
dc.identifierhttp://arxiv.org/abs/cond-mat/0304384
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21240
dc.subjectMesoscale and Nanoscale Physics
dc.titleSingle-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise
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