Strain-controlled correlation effects in self-assembled quantum dot stacks

Simple item page
dc.creatorKunert, R.
dc.creatorSchoell, E.
dc.date2006-07-01
dc.date.accessioned2026-07-07T07:41:23Z
dc.date.available2026-07-07T07:41:23Z
dc.descriptionWe show that elastic interactions of an array of self-assembled quantum dots in a parent material matrix are markedly distinct from the elastic field created by a single point defect, and can explain the observed abrupt correlation--anticorrelation transition in semiconductor quantum dot stacks. Finite volume effects of the quantum dots are shown to lead to sharper transitions. Our analysis also predicts the inclination angle under which the alignment in successive quantum dot layers occurs in dependence on the material anisotropy.
dc.identifierhttps://arxiv.org/abs/cond-mat/0607016
dc.identifierhttp://arxiv.org/abs/cond-mat/0607016
dc.identifierdoi:10.1063/1.2354476
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122086
dc.subjectMaterials Science
dc.titleStrain-controlled correlation effects in self-assembled quantum dot stacks
dc.typetext

Files

Collections

arXiv