Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots

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dc.creatorWinkelnkemper, M.
dc.creatorDworzak, M.
dc.creatorBartel, T. P.
dc.creatorStrittmatter, A.
dc.creatorHoffmann, A.
dc.creatorBimberg, D.
dc.date2008-07-31
dc.date.accessioned2026-07-07T10:00:12Z
dc.date.available2026-07-07T10:00:12Z
dc.descriptionWe derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiative lifetimes on the exact QD geometry and composition. Moreover, the radiative lifetimes also depend heavily on the composition of the direct surrounding of the QDs. A broad lifetime distribution occurs even for moderate variations of the QD structure. Thus, for unscreened fields a multi-exponential decay of the ensemble PL is generally expected in this material system.
dc.description5 pages, 4 figures. accepted at Physica Status Solidi
dc.identifierhttps://arxiv.org/abs/0807.5056
dc.identifierhttp://arxiv.org/abs/0807.5056
dc.identifierdoi:10.1002/pssb.200844129
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168266
dc.subjectMaterials Science
dc.titleOrigin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
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