Spin transference and magnetoresistance amplification in a transistor

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dc.creatorDery, Hanan
dc.creatorCywinski, Lukasz
dc.creatorSham, Lu J.
dc.date2005-07-15
dc.date2005-09-21
dc.date.accessioned2026-07-07T09:21:47Z
dc.date.available2026-07-07T09:21:47Z
dc.descriptionA current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.
dc.description4 pages, 3 figures, revised version, changed title, new figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507378
dc.identifierhttp://arxiv.org/abs/cond-mat/0507378
dc.identifierPhys. Rev. B 73, 161307(R) (2006)
dc.identifierdoi:10.1103/PhysRevB.73.161307
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155145
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSpin transference and magnetoresistance amplification in a transistor
dc.typetext

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