Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well

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dc.creatorMinkov, G. M.
dc.creatorGermanenko, A. V.
dc.creatorSherstobitov, A. A.
dc.creatorZvonkov, B. N.
dc.date2007-02-09
dc.date.accessioned2026-07-07T12:08:21Z
dc.date.available2026-07-07T12:08:21Z
dc.descriptionThe temperature and magnetic field dependences of the conductivity of the heterostructures with asymmetric In$_x$Ga$_{1-x}$As quantum well are studied. It is shown that the metallic-like temperature dependence of the conductivity observed in the structures investigated is quantitatively understandable within the whole temperature range, $T=0.4-20$ K. It is caused by the interference quantum correction at fast spin relaxation for 0.4 K$ < T < 1.5$ K. At higher temperatures, 1.5 K$<T<4$ K, it is due to the interaction quantum correction. Finally, at $T>4-6$ K, the metallic-like behavior is determined by the phonon scattering.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0702236
dc.identifierhttp://arxiv.org/abs/cond-mat/0702236
dc.identifierPhys. Rev. B 75, 193311 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.193311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209290
dc.subjectDisordered Systems and Neural Networks
dc.titleInterference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum well
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