Vibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors

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dc.creatorLüffe, Matthias C.
dc.creatorKoch, Jens
dc.creatorvon Oppen, Felix
dc.date2007-09-06
dc.date2007-09-28
dc.date.accessioned2026-07-07T09:28:34Z
dc.date.available2026-07-07T09:28:34Z
dc.descriptionCurrent-driven vibrational non-equilibrium induces vibrational sidebands in single-molecule transistors which arise from tunneling processes accompanied by absorption of vibrational quanta. Unlike conventional sidebands, these absorption sidebands occur in a regime where the current is nominally Coulomb blockaded. Here, we develop a detailed and analytical theory of absorption sidebands, including current-voltage characteristics as well as shot noise. We discuss the relation of our predictions to recent experiments.
dc.description7 pages, 6 figures; revised discussion of relation to experiment
dc.identifierhttps://arxiv.org/abs/0709.0876
dc.identifierhttp://arxiv.org/abs/0709.0876
dc.identifierPhys. Rev. B 77, 125306 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.125306
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/157469
dc.subjectMesoscale and Nanoscale Physics
dc.titleVibrational absorption sidebands in the Coulomb blockade regime of single-molecule transistors
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