Destabilization of the 2D conducting phase by an in-plane magnetic field

dc.creatorThakur, J. S.
dc.creatorNeilson, D.
dc.date1998-12-22
dc.date1998-12-24
dc.date.accessioned2026-07-07T03:12:28Z
dc.date.available2026-07-07T03:12:28Z
dc.descriptionWe propose a mechanism for the recently reported destabilization by an in-plane magnetic field of the conducting phase of low density electrons in 2D. We apply our self-consistent approach based on the memory function formalism to the fully spin polarized electron system. This takes into account both disorder and exchange-correlation effects. We show that spin polarization significantly favors localization because of the enhancement of the exchange-correlations. A key outcome is that the conducting phase for the fully spin polarized system is significantly suppressed. The in-plane magnetic field needed to stabilize the fully spin polarized state lies in the range 0.1<H<1 T, depending on the carrier density. We determine the metal-insulator phase diagram for the unpolarized and fully polarized systems, and we estimate the dependence of the critical magnetic field on carrier density.
dc.description4 pages, RevTeX + epsf, 7 figures. Minor changes to text and figures. Additional references
dc.identifierhttps://arxiv.org/abs/cond-mat/9812348
dc.identifierhttp://arxiv.org/abs/cond-mat/9812348
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28920
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleDestabilization of the 2D conducting phase by an in-plane magnetic field
dc.typetext

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