The kinetic Monte Carlo Simulation scheme of the homoepicaxial growth of GaAs(001) for heterostructural growth on GaAs(001) substrate

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dc.creatorIshii, Akira
dc.creatorTsukao, Masatoshi
dc.creatorToda, Natsue
dc.creatorOshima, Shunsuke
dc.date2005-01-11
dc.date.accessioned2026-07-07T03:03:09Z
dc.date.available2026-07-07T03:03:09Z
dc.descriptionThe simulation scheme for heterostructural growth of compound semiconductors is presented based on the kinetic Monte Carlo method. The sheme is designed as simple as possible in order to apply it for any heteroepitaxial growth on GaAs(001) substrate. The parameters used in the simulation are determined with the first-principles calculation to reproduce experimental RHEED intensity curves for homoepitaxial growth of GaAs(001).
dc.descriptionPDF, 9 pages with 1 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0501233
dc.identifierhttp://arxiv.org/abs/cond-mat/0501233
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25651
dc.subjectMaterials Science
dc.titleThe kinetic Monte Carlo Simulation scheme of the homoepicaxial growth of GaAs(001) for heterostructural growth on GaAs(001) substrate
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