Comment on "Memory Effects in an Interacting Magnetic Nanoparticle System" by Sun et. al, prl, 91, 167206 (2003)
| dc.creator | Chakravarty, S. | |
| dc.creator | Frydman, A. | |
| dc.creator | Bandyopadhyay, M. | |
| dc.creator | Dattagupta, S. | |
| dc.creator | Sengupta, S. | |
| dc.date | 2004-03-23 | |
| dc.date.accessioned | 2026-07-07T02:57:13Z | |
| dc.date.available | 2026-07-07T02:57:13Z | |
| dc.description | In this Comment we report a phenomenon identical to that observed in ({Y. Sun, M. B. Salamon, K. Garnier and R. S. Averback, Phys. Rev. Lett. 91, 167206 (2003)}) for systems of NiFe{$_2$}O{$_4$} particles (mean size $\approx$ 3nm) embedded in a SiO{$_2$} matrix with two different interparticle spacings 4 nm (1) and 15 nm (2), which controls the strength of the dipolar interactions. Not only do we find the memory effect to be present in the non-interacting sample (2), indeed we find it to be {\em more} prominent than in the interacting case (1). We demonstrate that this effect can be simply attributed to a superposition of relaxation times of two sets of particles. | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0403574 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0403574 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/23578 | |
| dc.subject | Materials Science | |
| dc.title | Comment on "Memory Effects in an Interacting Magnetic Nanoparticle System" by Sun et. al, prl, 91, 167206 (2003) | |
| dc.type | text |