Landau Cooling in Metal-Semiconductor Nanostructures

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dc.creatorGiazotto, F.
dc.creatorTaddei, F.
dc.creatorGovernale, M.
dc.creatorFazio, R.
dc.creatorBeltram, F.
dc.date2007-03-05
dc.date.accessioned2026-07-07T08:50:09Z
dc.date.available2026-07-07T08:50:09Z
dc.descriptionAn electron-cooling principle based on Landau quantization is proposed for nanoscale conductor systems. Operation relies on energy-selective electron tunneling into a two-dimensional electron gas in quantizing magnetic fields. This quantum refrigerator provides significant cooling power (~1 nW at a few K for realistic parameters) and offers a unique flexibility thanks to its tunability via the magnetic-field intensity. The available performance is only marginally affected by nonidealities such as disorder or imperfections in the semiconductor. Methods for the implementation of this system and its characterization are discussed.
dc.description4 pages, 4 color figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703119
dc.identifierhttp://arxiv.org/abs/cond-mat/0703119
dc.identifierNew J. Phys. 9, 439 (2007)
dc.identifierdoi:10.1088/1367-2630/9/12/439
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144514
dc.subjectMesoscale and Nanoscale Physics
dc.titleLandau Cooling in Metal-Semiconductor Nanostructures
dc.typetext

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