On the electrostatic potential profile in biased molecular wires

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dc.creatorNitzan, Abraham
dc.creatorGalperin, Michael
dc.creatorIngold, Gert-Ludwig
dc.creatorGrabert, Hermann
dc.date2002-07-31
dc.date.accessioned2026-07-07T05:47:56Z
dc.date.available2026-07-07T05:47:56Z
dc.descriptionThe potential profile across a biased molecular junction is calculated within the framework of a simple Thomas-Fermi type screening model. In particular, the relationship between this profile and the lateral molecular cross section is examined. We find that a transition from a linear potential profile to a potential that drops mainly near the molecule-metal contacts occurs with increasing cross section width, in agreement with numerical quantum calculations.
dc.description6 pages, 5 figures, RevTeX4
dc.identifierhttps://arxiv.org/abs/physics/0207124
dc.identifierhttp://arxiv.org/abs/physics/0207124
dc.identifierJ. Chem. Phys. 117, 10837 (2002)
dc.identifierdoi:10.1063/1.1522406
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/84841
dc.subjectChemical Physics
dc.subjectMesoscale and Nanoscale Physics
dc.titleOn the electrostatic potential profile in biased molecular wires
dc.typetext

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