STM characterization of the Si-P heterodimer

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dc.creatorCurson, N. J.
dc.creatorSchofield, S. R.
dc.creatorSimmons, M. Y.
dc.creatorOberbeck, L.
dc.creatorO'Brien, J. L.
dc.creatorClark, R. G.
dc.date2003-10-14
dc.date.accessioned2026-07-07T06:26:20Z
dc.date.available2026-07-07T06:26:20Z
dc.descriptionWe use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ${\sim}$0.002 Langmuirs of PH$_{3}$ results in the adsorption of PH$_{x}$ (x=2,3) onto the surface and some etching of Si to form individual Si ad-dimers. Annealing to 350$^{\circ}$C results in the incorporation of P into the surface layer to form Si-P heterodimers and the formation of short 1-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zig-zag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si.
dc.description6 pages, 4 figures (only 72dpi)
dc.identifierhttps://arxiv.org/abs/cond-mat/0310297
dc.identifierhttp://arxiv.org/abs/cond-mat/0310297
dc.identifierPhys. Rev. B 69, 195303 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.195303
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97080
dc.subjectMaterials Science
dc.titleSTM characterization of the Si-P heterodimer
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