X-ray Absorption Study of Pulsed Laser Deposited Boron Nitride Films

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dc.creatorChaiken, A.
dc.creatorTerminello, L. J.
dc.creatorWong, J.
dc.creatorDoll, G. L.
dc.creatorSato, T.
dc.date1993-11-26
dc.date.accessioned2026-07-07T03:06:59Z
dc.date.available2026-07-07T03:06:59Z
dc.descriptionB and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion-assisted pulsed laser deposition. Comparison of the films' spectra to those of several single-phase BN powder standards shows that the films consist primarily of $sp^2$ bonds. Other features in the films' spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.
dc.description7 pages, LaTeX 2.09. Figures not included, but available by fax. Send email to chaiken@csmgee.llnl.gov
dc.identifierhttps://arxiv.org/abs/cond-mat/9311058
dc.identifierhttp://arxiv.org/abs/cond-mat/9311058
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27014
dc.subjectCondensed Matter
dc.titleX-ray Absorption Study of Pulsed Laser Deposited Boron Nitride Films
dc.typetext

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