29Si Hyperfine Structure of the E'_αCenter in Amorphous Silicon Dioxide

Simple item page
dc.creatorBuscarino, G.
dc.creatorAgnello, S.
dc.creatorGelardi, F. M.
dc.date2006-09-25
dc.date.accessioned2026-07-07T07:23:42Z
dc.date.available2026-07-07T07:23:42Z
dc.descriptionWe report a study by electron paramagnetic resonance (EPR) on the E'_αpoint defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'_alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'_alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.
dc.description4 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/0609643
dc.identifierhttp://arxiv.org/abs/cond-mat/0609643
dc.identifierPhysical Review Letters, Vol. 97, Issue 13, Page 135502, (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.135502
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116079
dc.subjectDisordered Systems and Neural Networks
dc.subjectOther Condensed Matter
dc.title29Si Hyperfine Structure of the E'_αCenter in Amorphous Silicon Dioxide
dc.typetext

Files

Collections

arXiv