Electron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors

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dc.creatorSliwa, C.
dc.creatorDietl, T.
dc.date2007-07-24
dc.date2008-11-27
dc.date.accessioned2026-07-07T13:04:01Z
dc.date.available2026-07-07T13:04:01Z
dc.descriptionSpin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent s-d exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent s-d exchange integral found in n-type materials is explained by the presence of repulsive Coulomb potentials at ionized Mn acceptors and a bottleneck effect.
dc.description9 pages, 6 figures; in this version the value of the bound hole g-factor is corrected and cond-mat/0505126 is included as section VI
dc.identifierhttps://arxiv.org/abs/0707.3542
dc.identifierhttp://arxiv.org/abs/0707.3542
dc.identifierPhysical Review B 78, 165205 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.165205
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/227010
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleElectron-hole contribution to the apparent s-d exchange interaction in III-V diluted magnetic semiconductors
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