The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

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dc.creatorRushforth, A. W.
dc.creatorVýborný, K.
dc.creatorKing, C. S.
dc.creatorEdmonds, K. W.
dc.creatorCampion, R. P.
dc.creatorFoxon, C. T.
dc.creatorWunderlich, J.
dc.creatorIrvine, A. C.
dc.creatorNovák, V.
dc.creatorOlejník, K.
dc.creatorKovalev, A. A.
dc.creatorSinova, Jairo
dc.creatorJungwirth, T.
dc.creatorGallagher, B. L.
dc.date2007-12-16
dc.date.accessioned2026-07-07T12:35:55Z
dc.date.available2026-07-07T12:35:55Z
dc.descriptionWe present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.
dc.descriptionSubmitted to JMMM for conference proceedings of WUN-SPIN 2007 (York, UK)
dc.identifierhttps://arxiv.org/abs/0712.2581
dc.identifierhttp://arxiv.org/abs/0712.2581
dc.identifierdoi:10.1016/j.jmmm.2008.04.070
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/217924
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleThe Origin and Control of the Sources of AMR in (Ga,Mn)As Devices
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