Determination of InN-GaN heterostructure band offsets from internal photoemission measurements

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dc.creatorMahmood, Zahid Hasan
dc.creatorShah, A. P.
dc.creatorKadir, Abdul
dc.creatorGokhale, M. R.
dc.creatorGhosh, Sandip
dc.creatorBhattacharya, Arnab
dc.creatorArora, B. M.
dc.date2007-06-05
dc.date.accessioned2026-07-07T08:04:09Z
dc.date.available2026-07-07T08:04:09Z
dc.descriptionBand discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV and the conduction band offset 1.82 eV.
dc.description10 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0706.0583
dc.identifierhttp://arxiv.org/abs/0706.0583
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129848
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleDetermination of InN-GaN heterostructure band offsets from internal photoemission measurements
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