Excitonic lasing in semiconductor quantum wires

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dc.creatorSirigu, L.
dc.creatorOberli, D. Y.
dc.creatorDegiorgi, L.
dc.creatorRudra, A.
dc.creatorKapon, E.
dc.date1999-12-01
dc.date.accessioned2026-07-07T03:15:22Z
dc.date.available2026-07-07T03:15:22Z
dc.descriptionDirect experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
dc.description11 pages, 4 figures, submitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/9912009
dc.identifierhttp://arxiv.org/abs/cond-mat/9912009
dc.identifierPhys. Rev. B 61, R10575 (2000)
dc.identifierdoi:10.1103/PhysRevB.61.R10575
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/30000
dc.subjectMaterials Science
dc.titleExcitonic lasing in semiconductor quantum wires
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