Decoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir

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dc.creatorFedichkin, L.
dc.creatorFedorov, A.
dc.date2003-09-01
dc.date2003-09-06
dc.date.accessioned2026-07-07T06:07:44Z
dc.date.available2026-07-07T06:07:44Z
dc.descriptionWe analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation processes, while for small tunneling rates, the virtual-phonon, dephasing processes dominate. Our results show that in common semiconductors, such as Si and GaAs, the latter mechanism determines the upper limit for the double-dot charge qubit performance measure.
dc.description4 pages, 2 figures, typos corrected, fig. 2 replaced by the improved version
dc.identifierhttps://arxiv.org/abs/quant-ph/0309024
dc.identifierhttp://arxiv.org/abs/quant-ph/0309024
dc.identifierPhys. Rev. A 69, 032311 (2004)
dc.identifierdoi:10.1103/PhysRevA.69.032311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/91396
dc.subjectQuantum Physics
dc.subjectMesoscale and Nanoscale Physics
dc.titleDecoherence Rate of Semiconductor Charge Qubit Coupled to Acoustic Phonon Reservoir
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