Calculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots

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dc.creatorHe, Lixin
dc.creatorBester, Gabriel
dc.creatorSu, Zhiqiang
dc.creatorZunger, Alex
dc.date2007-03-26
dc.date.accessioned2026-07-07T07:53:47Z
dc.date.available2026-07-07T07:53:47Z
dc.descriptionThe near-field scanning optical microscopy images of excitonic wavefunctions in self-assembled InAs/GaAs quantum dots are calculated using an empirical pseudopotential method, followed by the configuration interaction (CI) treatment of many-particle effects. We show the wavefunctions of neutral exciton $X^0$ of different polarizations, and compare them to those of the biexciton $XX$ and the charged excitons $X^+$ and $X^-$. We further show that the exciton $X(P_h \to S_e)$ transition which is forbidden in the far-field photoluminescence has comparable intensities to that of $X(S_h \to S_e)$ transition in the near-field photoluminescence .
dc.identifierhttps://arxiv.org/abs/cond-mat/0703679
dc.identifierhttp://arxiv.org/abs/cond-mat/0703679
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126354
dc.subjectMaterials Science
dc.titleCalculation of near-field scanning optical images of exciton, charged excition and multiexciton wavefunctions in self-assembled InAs/GaAs quantum dots
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