Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells

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dc.creatorXu, S. J.
dc.creatorXiong, S. -J.
dc.creatorLiu, J.
dc.creatorZheng, H. Z.
dc.creatorZhang, F. C.
dc.date2005-01-29
dc.date2006-02-23
dc.date.accessioned2026-07-07T06:37:29Z
dc.date.available2026-07-07T06:37:29Z
dc.descriptionWe report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at the Fermi level through the doped silicon impurity states inside the wells by using an impurity Anderson model. The Coulomb blockade resonance of the impurity states induces a Fano dip above the Kondo resonance.
dc.description11 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0501722
dc.identifierhttp://arxiv.org/abs/cond-mat/0501722
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/100408
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleExperimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells
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