Tunnel Magnetoresistance of a Single-Molecule Junction

dc.creatorSaffarzadeh, Alireza
dc.date2008-12-26
dc.date.accessioned2026-07-07T12:22:52Z
dc.date.available2026-07-07T12:22:52Z
dc.descriptionBased on the non-equilibrium Green's function (NEGF) technique and the Landauer-Büttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the number of contact points between the device electrodes and the molecule. The TMR values more than 60% are obtained by adjusting the related parameters.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0812.4698
dc.identifierhttp://arxiv.org/abs/0812.4698
dc.identifierJ. Appl. Phys. 104, 123715 (2008)
dc.identifierdoi:10.1063/1.3050347
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/213797
dc.subjectMesoscale and Nanoscale Physics
dc.titleTunnel Magnetoresistance of a Single-Molecule Junction
dc.typetext

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