Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

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dc.creatorGoncharuk, N. A.
dc.creatorSmrcka, L.
dc.creatorSvoboda, P.
dc.creatorVasek, P.
dc.creatorKucera, J.
dc.creatorKrupko, Yu.
dc.creatorWegscheider, W.
dc.date2007-05-31
dc.date.accessioned2026-07-07T08:19:49Z
dc.date.available2026-07-07T08:19:49Z
dc.descriptionThe magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.
dc.description7 pages, 6 figures, accepted for publication in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/0705.4615
dc.identifierhttp://arxiv.org/abs/0705.4615
dc.identifierPhys. Rev. B 75 (2007) 245322 (1-7)
dc.identifierdoi:10.1103/PhysRevB.75.245322
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/134897
dc.subjectMesoscale and Nanoscale Physics
dc.titleIllumination-induced changes of the Fermi surface topology in three-dimensional superlattices
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