Fabrication of Conducting Si Nanowire Arrays

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dc.creatorJohnston-Halperin, E.
dc.creatorBeckman, R. A.
dc.creatorMelosh, N. A.
dc.creatorLuo, Y.
dc.creatorGreen, J. E.
dc.creatorHeath, J. R.
dc.date2004-03-19
dc.date.accessioned2026-07-07T02:57:11Z
dc.date.available2026-07-07T02:57:11Z
dc.descriptionThe recent development of the superlattice nanowire pattern transfer (SNAP) technique allows for the fabrication of arrays of nanowires at a diameter, pitch, aspect ratio, and regularity beyond competing approaches. Here, we report the fabrication of conducting Si nanowire arrays with wire widths and pitches of 10-20 nm and 40-50 nm, respectively, and resistivity values comparable to the bulk through the selection of appropriate silicon-on-insulator substrates, careful reactive-ion etching, and spin-on glass doping. These results promise the realization of interesting nano-electronic circuits and devices, including chemical and biological sensors, nano-scale mosaics for molecular electronics, and ultra-dense field-effect transistor (FET) arrays.
dc.description10 pages, 3 figures, submitted to APL Mar '04
dc.identifierhttps://arxiv.org/abs/cond-mat/0403518
dc.identifierhttp://arxiv.org/abs/cond-mat/0403518
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23564
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleFabrication of Conducting Si Nanowire Arrays
dc.typetext

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