Direct evidence of the self-compression of injected electron-hole plasma in silicon
| dc.creator | Altukhov, Pavel | |
| dc.creator | Kuzminov, Evgenii | |
| dc.date | 2008-01-16 | |
| dc.date | 2008-06-12 | |
| dc.date.accessioned | 2026-07-07T09:43:52Z | |
| dc.date.available | 2026-07-07T09:43:52Z | |
| dc.description | A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting dots and a weakly emitting area outside the dots, serves as a direct evidence of the self-compression of injected electron-hole plasma in silicon. The plasma self-compression explains concentration of injected carriers into one or a few strongly emitting plasma drops. | |
| dc.description | 3 pages, 2 figures, published in Physica Status Solidi (b) | |
| dc.identifier | https://arxiv.org/abs/0801.2528 | |
| dc.identifier | http://arxiv.org/abs/0801.2528 | |
| dc.identifier | phys. stat. sol. (b), 2008, v. 245, No. 6, p.p. 1181-1183 | |
| dc.identifier | doi:10.1002/pssb.200743504 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/162674 | |
| dc.subject | Materials Science | |
| dc.title | Direct evidence of the self-compression of injected electron-hole plasma in silicon | |
| dc.type | text |