Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire

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dc.creatorEmam, T G
dc.date2005-09-14
dc.date.accessioned2026-07-07T03:06:37Z
dc.date.available2026-07-07T03:06:37Z
dc.descriptionThis work studies the effect of temperature on the binding energy of a shallow hydrogenic impurity located on the axis of a cylindrical semiconductor GaAs Al_x Ga_{1-x} As quantum well wire. The results show that the binding energy at a low temperature of 100 K is increased by about 11% over that associated with nearly room temperature, $300 K$, and is also increased by about 23% over that associated with temperature of 500 K.
dc.description6 pages including 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0509375
dc.identifierhttp://arxiv.org/abs/cond-mat/0509375
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26878
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleEffect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum Well Wire
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