Phonon-induced decoherence and dissipation in donor-based charge qubits

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dc.creatorEckel, J.
dc.creatorWeiss, S.
dc.creatorThorwart, M.
dc.date2006-09-07
dc.date.accessioned2026-07-07T07:23:27Z
dc.date.available2026-07-07T07:23:27Z
dc.descriptionWe investigate the phonon-induced decoherence and dissipation in a donor-based charge quantum bit realized by the orbital states of an electron shared by two dopant ions which are implanted in a silicon host crystal. The dopant ions are taken from the group-V elements Bi, As, P, Sb. The excess electron is coupled to deformation potential acoustic phonons which dominate in the Si host. The particular geometry tailors a non-monotonous frequency distribution of the phonon modes. We determine the exact qubit dynamics under the influence of the phonons by employing the numerically exact quasi-adiabatic propagator path integral scheme thereby taking into account all bath-induced correlations. In particular, we have improved the scheme by completely eliminating the Trotter discretization error by a Hirsch-Fye extrapolation. By comparing the exact results to those of a Born-Markov approximation we find that the latter yields appropriate estimates for the decoherence and relaxation rates. However, noticeable quantitative corrections due to non-Markovian contributions appear.
dc.description8 pages, 8 figures, published online in Eur.Phys.J.B, article in press; the original publication is avaiable at www.eurphysj.org
dc.identifierhttps://arxiv.org/abs/cond-mat/0609164
dc.identifierhttp://arxiv.org/abs/cond-mat/0609164
dc.identifierEur. Phys. J. B 53, 91-98 (2006)
dc.identifierdoi:10.1140/epjb/e2006-00346-y
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/115987
dc.subjectMesoscale and Nanoscale Physics
dc.subjectOther Condensed Matter
dc.subjectQuantum Physics
dc.titlePhonon-induced decoherence and dissipation in donor-based charge qubits
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