Magnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction

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dc.creatorMunteanu, F. M.
dc.creatorKim, Yongmin
dc.creatorPerry, C. H.
dc.creatorSimmons, D. G. Rickel J. A.
dc.creatorReno, J. L.
dc.date1999-05-19
dc.date.accessioned2026-07-07T03:13:31Z
dc.date.available2026-07-07T03:13:31Z
dc.descriptionThe magnetophotoluminescence (MPL) behavior of a GaAs/Al(0.3)Ga(0.7)As single heterojunction has been investigated to 60T. We observed negatively charged singlet and triplet exciton states that are formed at high magnetic fields beyond the nu=1 quantum Hall state. The variation of the charged exciton binding energies are in good agreement with theoretical predictions. The MPL transition intensities for these states showed intensity variations (maxima and minima) at the nu=1/3 and 1/5 fractional quantum Hall (FQH) state as a consequence of a large reduction of electron-hole screening at these filling factors.
dc.descriptionsubmitted to Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/9905290
dc.identifierhttp://arxiv.org/abs/cond-mat/9905290
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29323
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleMagnetic Field Induced Charged Exciton Studies in a GaAs/Al(0.3)Ga(0.7)As Single Heterojunction
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