Graphene based spin field effect transistor
| dc.creator | Semenov, Y. G. | |
| dc.creator | Kim, K. W. | |
| dc.creator | Zavada, J. M. | |
| dc.date | 2007-07-19 | |
| dc.date.accessioned | 2026-07-07T08:19:20Z | |
| dc.date.available | 2026-07-07T08:19:20Z | |
| dc.description | A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the graphene channel. Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV. It was shown that the device stability to the thermal dispersion can provide the armchair nanoribbons of specific width that keeps the Dirac point in electron dispersion law. | |
| dc.description | 7 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/0707.2966 | |
| dc.identifier | http://arxiv.org/abs/0707.2966 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/134728 | |
| dc.subject | Materials Science | |
| dc.title | Graphene based spin field effect transistor | |
| dc.type | text |