Theory of NMR in semiconductor quantum point contact devices

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dc.creatorCooper, N. R.
dc.creatorTripathi, V.
dc.date2007-10-23
dc.date.accessioned2026-07-07T09:46:29Z
dc.date.available2026-07-07T09:46:29Z
dc.descriptionWe describe how a local non-equilibrium nuclear polarisation can be generated and detected by electrical means in a semiconductor quantum point contact device. We show that measurements of the nuclear spin relaxation rate will provide clear signatures of the interaction mechanism underlying the "0.7" conductance anomaly. Our analysis illustrates how nuclear magnetic resonance methods, which are used extensively to study strongly-correlated electron phases in bulk materials, can be made to play a similarly important role in nanoscale devices.
dc.identifierhttps://arxiv.org/abs/0710.4302
dc.identifierhttp://arxiv.org/abs/0710.4302
dc.identifierPhys. Rev. B 77, 245324 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.245324
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163549
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleTheory of NMR in semiconductor quantum point contact devices
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