Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors

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dc.creatorZubko, P.
dc.creatorJung, D. J.
dc.creatorScott, J. F.
dc.date2006-07-23
dc.date.accessioned2026-07-07T08:01:43Z
dc.date.available2026-07-07T08:01:43Z
dc.descriptionWe have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.
dc.description17 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0607585
dc.identifierhttp://arxiv.org/abs/cond-mat/0607585
dc.identifierJ. Appl. Phys. 100, 114113 (2006)
dc.identifierdoi:10.1063/1.2382479
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/129001
dc.subjectMaterials Science
dc.titleElectrical Characterization of PbZr0.4Ti0.6O3 Capacitors
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