Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films
| dc.creator | Ghosh, Arindam | |
| dc.creator | Raychaudhuri, A. K. | |
| dc.creator | Sreekala, R. | |
| dc.creator | Rajeswari, M. | |
| dc.creator | Venkatesan, T. | |
| dc.date | 1998-11-26 | |
| dc.date.accessioned | 2026-07-07T03:12:12Z | |
| dc.date.available | 2026-07-07T03:12:12Z | |
| dc.description | In this paper we report the observation of curent induced change of resistance of thin metallic oxide films. The resistance changes at a very low current (current density $J \geq 10^{3}$ A/cm$^{2}$). We find that the time dependence associated with the processes (increase of resistance) show a streched exponential type dependence at lower temperature, which crosses over to a creep type behavior at $T \geq$ 350 K. The time scale associated shows a drastic drop in the magnitude at $T \approx$ 350 K, where a long range diffusion sets in increasing the conductivity noise. The phenomena is like a "glass-transition" in the random lattice of oxygen ions. | |
| dc.description | 8 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9811377 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9811377 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/28819 | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.subject | Materials Science | |
| dc.title | Kinetics of electric field induced oxygen ion migration in epitaxial metallic oxide films | |
| dc.type | text |