Coherent back-scattering near the two-dimensional metal-insulator transition

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dc.creatorRahimi, Maryam
dc.creatorAnissimova, S.
dc.creatorSakr, M. R.
dc.creatorKravchenko, S. V.
dc.creatorKlapwijk, T. M.
dc.date2002-10-01
dc.date2003-08-02
dc.date.accessioned2026-07-07T02:47:31Z
dc.date.available2026-07-07T02:47:31Z
dc.descriptionWe have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching to the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.
dc.descriptionto appear in PRL
dc.identifierhttps://arxiv.org/abs/cond-mat/0210008
dc.identifierhttp://arxiv.org/abs/cond-mat/0210008
dc.identifierPhys. Rev. Lett. 91, 116402 (2003)
dc.identifierdoi:10.1103/PhysRevLett.91.116402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20039
dc.subjectStrongly Correlated Electrons
dc.titleCoherent back-scattering near the two-dimensional metal-insulator transition
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