Electron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$

dc.creatorXu, Gang
dc.creatorZhang, Haijun
dc.creatorDai, Xi
dc.creatorFang, Zhong
dc.date2008-07-09
dc.date.accessioned2026-07-07T12:27:53Z
dc.date.available2026-07-07T12:27:53Z
dc.descriptionWe show, from first-principles calculations, that the hole-doped side of FeAs-based compounds is different from its electron-doped counterparts. The electron side is characterized as Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective partial orbital ordering develops together with checkboard antiferromagnetic (AF) ordering without lattice distortion. A unique SDW-to-AF QCP is achieved, and $J_2$=$J_1/2$ criteria (in the approximate $J_1&J_2$ model) is satisfied. The observed superconductivity is located in the vicinity of QCP for both sides.
dc.description4 pages
dc.identifierhttps://arxiv.org/abs/0807.1401
dc.identifierhttp://arxiv.org/abs/0807.1401
dc.identifierEPL, 84 (2008) 67015
dc.identifierdoi:10.1209/0295-5075/84/67015
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/215360
dc.subjectSuperconductivity
dc.subjectStrongly Correlated Electrons
dc.titleElectron-hole Asymmetry and Quantum Critical Point in Hole-doped BaFe$_2$As$_2$
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