Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

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dc.creatorKravchenko, S. V.
dc.creatorShashkin, A. A.
dc.creatorBloore, David A.
dc.creatorKlapwijk, T. M.
dc.date2000-07-03
dc.date.accessioned2026-07-07T02:38:05Z
dc.date.available2026-07-07T02:38:05Z
dc.descriptionWe have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.
dc.description4 pages, postscript figures included
dc.identifierhttps://arxiv.org/abs/cond-mat/0007003
dc.identifierhttp://arxiv.org/abs/cond-mat/0007003
dc.identifierSolid State Commun. 116, 495 (2000)
dc.identifierdoi:10.1016/S0038-1098(00)00361-6
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16538
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleShubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon
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