Modulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating

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dc.creatorLi, Yongqing
dc.creatorRen, Cong
dc.creatorXiong, Peng
dc.creatorvon Molnar, Stephan
dc.creatorOhno, Yuzo
dc.creatorOhno, Hideo
dc.date2004-06-19
dc.date2004-06-21
dc.date.accessioned2026-07-07T02:58:43Z
dc.date.available2026-07-07T02:58:43Z
dc.descriptionWe present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.
dc.description5 pages, 4 figs
dc.identifierhttps://arxiv.org/abs/cond-mat/0406444
dc.identifierhttp://arxiv.org/abs/cond-mat/0406444
dc.identifierPhys. Rev. Lett. 93, 246602 (2004)
dc.identifierdoi:10.1103/PhysRevLett.93.246602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/24216
dc.subjectMesoscale and Nanoscale Physics
dc.titleModulation of Noise in Submicron GaAs/AlGaAs Hall Devices by Gating
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