Electron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration

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dc.creatorBorzdov, Andrei
dc.creatorPozdnyakov, Dmitry
dc.creatorBorzdov, Vladimir
dc.date2008-06-19
dc.date.accessioned2026-07-07T09:45:35Z
dc.date.available2026-07-07T09:45:35Z
dc.descriptionElectron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of surface roughness height on electron drift velocity at 77 and 300 K is investigated for the values of longitudinal electric field strength of 0.1 and 1.0 kV/cm. A possibility of electron drift velocity control due to variation of the bias applied to the gates, which results in the electron scattering rate alteration, is ascertained.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0806.3181
dc.identifierhttp://arxiv.org/abs/0806.3181
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163244
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron drift velocity control in GaAs-in-Al2O3 quantum wire transistor structure due to the electron scattering rate alteration
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