On the Locality of Physics in Metals, Semiconductors, and Insulators

dc.creatorIsmail-Beigi, Sohrab
dc.creatorArias, Tomas
dc.date1998-05-13
dc.date1999-02-22
dc.date.accessioned2026-07-07T03:10:33Z
dc.date.available2026-07-07T03:10:33Z
dc.descriptionWe present an analytical study of the spatial decay rate $γ$ of the one-particle density matrix $ρ(\vec r,\vec r')\sim\exp(-γ|\vec r-\vec r'|)$ for systems described by single particle orbitals in periodic potentials in arbitrary dimensions. This decay reflects electronic locality in condensed matter systems and is also crucial for O(N) density functional methods. We find that $γ$ behaves contrary to the conventional wisdom that generically $γ\propto\sqrtΔ$ in insulators and $γ\propto\sqrt{T}$ in metals, where $Δ$ is the direct band gap and $T$ the temperature. Rather, in semiconductors $γ\proptoΔ$, and in metals at low temperature $γ\propto T$.
dc.descriptionWill appear in March 8th 1999 issue of Physical Review Letters
dc.identifierhttps://arxiv.org/abs/cond-mat/9805147
dc.identifierhttp://arxiv.org/abs/cond-mat/9805147
dc.identifierPhysical Review Letters, Vol 82, issue 10
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28271
dc.subjectMaterials Science
dc.titleOn the Locality of Physics in Metals, Semiconductors, and Insulators
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