Control of spin coherence in $n$-type GaAs quantum wells using strain

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dc.creatorJiang, L.
dc.creatorWu, M. W.
dc.date2004-12-15
dc.date2005-05-18
dc.date.accessioned2026-07-07T06:19:00Z
dc.date.available2026-07-07T06:19:00Z
dc.descriptionWe show that the bulk-inversion-asymmetry-type strain-induced spin-orbit coupling can be used to effectively modify the Dresselhaus spin splitting in (001) GaAs quantum wells with small well width and the resulting spin lifetime can be increased by two orders of magnitude to nanoseconds under right conditions. The efficiency of this strain manipulation of the spin dephasing time under different conditions such as temperature, electric field and electron density is investigated in detail.
dc.description4 pages, 5 figures in eps format
dc.identifierhttps://arxiv.org/abs/cond-mat/0412385
dc.identifierhttp://arxiv.org/abs/cond-mat/0412385
dc.identifierPhys. Rev. B 72, 033311 (2005).
dc.identifierdoi:10.1103/PhysRevB.72.033311
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/94932
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleControl of spin coherence in $n$-type GaAs quantum wells using strain
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